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| TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V Low saturation voltage for higher efficiency. Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application QCA QCB Unit A Maximum Ratings Ratings Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage QCA50B Mounting Torque QCA50A Mass Mounting M6 Terminal M5 Mounting M5 A.C.1minute Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25 Recommended Value 1.5 2.5 15 25 Recommended Value 1.0 1.4 10 14 Typical Value TC 25 40 =pw 1ms VBE 2V Conditions Tj 25 QCA50B40 QCA50B60 QCA50A40 QCA50A60 Unit V V V A A A W 400 400 10 50 100 50 3 300 600 600 150 V Nm fB g Tj 25 40 125 2500 4.7 48 2.7 28 2.7 28 1.5 15 240/195 Terminal M4 QCA50B/QCA50A Electrical Characteristics Symbol ICBO IEBO VCEO SUS Item Collector Cut-off Current Emitter Cut-off Current QCA50B40 QCB50A40 QCA50B60 QCB50A60 QCA50B40 QCB50A40 QCA50B60 QCB50A60 Conditions VCB VCBO VEB VEBO Ratings Min. Max. 1.0 300 300 Unit mA mA V Ic 1A Collector Emitter Sustaning Voltage VCEX SUS 450 400 5A V 600 75/100 2.0 2.5 1.0 12.0 2.0 1.4 0.4/1.3 V /W V V s Ic 10A IB2 hFE VCE(sat) VBE(sat) ton ts tf VECO Rth(j-c) 3 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) Ic 50A VCE 2V/5V Ic 50A IB 0.67A Ic 50A IB 0.67A Vcc 300V Ic 50A 1A IB1 1A IB2 Ic 50A Transistor part Diode part QCA50B/QCB50A40/60 4 |
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